Semiconductor laser light guide cone

The main products are: narrow band interference filter, fluorescence filter, long wave pass filter, beauty instrument cut-off filter, gradient density filter, dielectric high-reflection film, metal high-reflection film, antireflection film, beam splitter film, lens, laser mirror and K9 light guide crystal, quartz light guide crystal, sapphire light guide crystal and other optical components.

Key words: lens fiber collimator port device

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Product Description

A semiconductor laser is a device that produces laser light by making a working substance of a certain semiconductor material.. Its working principle is to realize the population inversion of non-equilibrium carriers through a certain excitation mode, between the energy band (conduction band and valence band) of semiconductor materials, or between the energy band of semiconductor materials and impurity (acceptor or donor) energy levels. When a large number of electrons in the population inversion state recombine with holes, stimulated emission occurs. There are three main excitation methods for semiconductor lasers, namely, electroinjection, optical pump and high-energy electron beam excitation. The electroinjection type semiconductor laser is generally a semiconductor junction diode made of gallium arsenide (GaAs), cadmium sulfide (CdS), indium phosphide (InP), zinc sulfide (ZnS) and other materials. The current is injected along the forward bias to stimulate and generate stimulated emission in the junction plane region. Optically pumped semiconductor lasers generally use N-type or P-type semiconductor single crystals (such as GaAS,InAs,InSb, etc.) as working substances, and laser light emitted by other lasers is used as optical pump excitation. The high-energy electron beam excitation type semiconductor laser is generally made of N-type or P-type semiconductor single crystal (such as PbS,CdS,ZhO, etc.) as a working substance, and is excited by injecting a high-energy electron beam from the outside. Among semiconductor laser devices, the electroinjection GaAs diode laser with double heterostructure has better performance and is widely used.

 

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